The Bridgman crystal growth process was developed by Percy Williams Bridgman at Harvard University. A single crystal of a scintillator or semiconductor is produced by heating a polycrystalline mass to greater than its melting point and then slowly solidifying the molten charge from one end. If a seed crystal is used to initiate growth, an oriented single crystal can be grown. The process can be done vertically or horizontally. The schematic to the left shows a crystal growing in a sealed quartz ampoule in the vertical Bridgman configuration.
A schematic of a crystal growing in a sealed quartz ampoule in the vertical Bridgman configuration.